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AUIRFR2905Z www.kersemi.com 1 s d g d-pak AUIRFR2905Z gds gate drain source s d g d features advanced process technology ultra low on-resistance 175c operating temperature fast switching repetitive avalanche allowed up to tjmax lead-free, rohs compliant automotive qualified * description specifically designed for automotive applications, this hexfet ? power mosfet utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. additional features of this design are a 175c junction operating temperature, fast switching speed and improved repetitive avalanche rating . these features combine to make this design an extremely efficient and reliable device for use in automotive applications and a wide variety of other applications. absolute maximum ratings

functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied.

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"! parameter units i d @ t c = 25c continuous drain current, v gs @ 10v (silicon limited) i d @ t c = 100c continuous drain current, v gs @ 10v (silicon limited) a i d @ t c = 25c continuous drain current, v gs @ 10v (package limited) i dm pulsed drain current p d @t c = 25c power dissipation w linear derating factor w/c v gs gate-to-source voltage v e as single pulse avalanche energy(thermally limited) mj e as (tested ) single pulse avalanche energy tested value i ar avalanche current a e ar repetitive avalanche energy mj t j operating junction and t stg storage temperature range c soldering temperature, for 10 seconds mounting torque, 6-32 or m3 screw thermal resistance parameter typ. max. units r jc junction-to-case ??? 1.38 r ja junction-to-ambient (pcb mount) ??? 50 c/w r ja junction-to-ambient ??? 110 -55 to + 175 300 (1.6mm from case ) 10 lbf in (1.1n m) 110 0.72 20 max. 59 42 240 42 82 55 see fig.12a, 12b, 15, 16 v (br)dss 55v r ds(on) typ. 11.1m ? max. 14.5m ? i d (silicon limited) 59a i d (package limited) 42a

2 www.kersemi.com s d g static electrical characteristics @ t j = 25c (unless otherwise specified) parameter min. t y p. max. units v (br)dss drain-to-source breakdown volta g e55??????v ? v (br)dss / ? t j breakdown volta g e temp. coefficient ??? 0.053 ??? v/c r ds(on) static drain-to-source on-resistance ??? 11.1 14.5 m ? v gs(th) gate threshold volta g e 2.0 ??? 4.0 v g fs forward transconductance 20 ??? ??? s r g gate input resistance ??? 1.3 ??? ? f = 1mhz, open drain i dss drain-to-source leaka g e current ??? ??? 20 ??? ??? 250 i gss gate-to-source forward leaka g e ??? ??? 200 gate-to-source reverse leaka g e ??? ??? -200 dynamic electrical characteristics @ t j = 25c (unless otherwise specified) parameter min. t y p. max. units q g total gate char g e ??? 29 44 q gs gate-to-source char g e ??? 7.7 ??? q gd gate-to-drain ("miller") char g e ??? 12 ??? t d(on) turn-on dela y time ???14??? t r rise time ???66??? t d(off) turn-off dela y time ???31??? t f fall time ???35??? l d internal drain inductance between lead, 6mm (0.25in.) l s internal source inductance from packa g e and center of die contact c iss input capacitance ??? 1380 ??? c oss output capacitance ??? 240 ??? c rss reverse transfer capacitance ??? 120 ??? c oss output capacitance ??? 820 ??? c oss output capacitance ??? 190 ??? c oss eff. effective output capacitance ??? 300 ??? diode characteristics parameter min. t y p. max. units i s continuous source current (body diode) a i sm pulsed source current (body diode) v sd diode forward volta g e ??? ??? 1.3 v t rr reverse recover y time ??? 23 35 ns q rr reverse recover y char g e ??? 16 24 nc t on forward turn-on time intrinsic turn-on time is negligible (turn-on is dominated by ls+ld) ??? ??? ??? ??? 4.5 7.5 42 240 a na nc ns nh pf ??? ??? ??? ??? conditions v gs = 0v, v ds = 1.0v, ? = 1.0mhz v gs = 0v, v ds = 44v, ? = 1.0mhz v gs = 0v, v ds = 0v to 44v v gs = 10v v dd = 28v i d = 36a r g = 15 ? t j = 25c, i s = 36a, v gs = 0v t j = 25c, i f = 36a, v dd = 28v di/dt = 100a/ s conditions v gs = 0v, i d = 250a reference to 25c, i d = 1ma v gs = 10v, i d = 36a v ds = v gs , i d = 250a v ds = 55v, v gs = 0v v ds = 55v, v gs = 0v, t j = 125c mosfet symbol showing the integral reverse p-n junction diode. v ds = 25v, i d = 36a i d = 36a v ds = 44v conditions v gs = 10v v gs = 0v v ds = 25v ? = 1.0mhz v gs = 20v v gs = -20v

www.kersemi.com 3 qualification information ? d pak msl1 rohs compliant yes esd machine model class m3(400v) (per aec-q101-002) human body model class h1a(500v) (per aec-q101-001) charged device model class c5 (1125v) (per aec-q101-005) moisture sensitivity level qualification level automotive (per aec-q101) ?? comments: this part number(s) passed automotive qualification. ir?s industrial and consumer qualification level is granted by extension of the higher automotive level.

4 www.kersemi.com fig 2. typical output characteristics fig 1. typical output characteristics fig 3. typical transfer characteristics fig 4. typical forward transconductance vs. drain current 0.1 1 10 100 v ds , drain-to-source voltage (v) 0.1 1 10 100 1000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) 60s pulse width tj = 25c 4.5v vgs top 15v 10v 8.0v 7.0v 6.0v 5.5v 5.0v bottom 4.5v 0 1 10 100 0.1 1 10 100 v ds , drain-to-source voltage (v) 1 10 100 1000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) 60s pulse width tj = 175c 4.5v vgs top 15v 10v 8.0v 7.0v 6.0v 5.5v 5.0v bottom 4.5v 4.0 5.0 6.0 7.0 8.0 9.0 10.0 v gs , gate-to-source voltage (v) 1.0 10.0 100.0 1000.0 i d , d r a i n - t o - s o u r c e c u r r e n t ( ) v ds = 25v 60s pulse width t j = 25c t j = 175c 0 1020304050 i d, drain-to-source current (a) 0 10 20 30 40 50 g f s , f o r w a r d t r a n s c o n d u c t a n c e ( s ) t j = 25c t j = 175c v ds = 15v 380s pulse width

www.kersemi.com 5 fig 8. maximum safe operating area fig 6. typical gate charge vs. gate-to-source voltage fig 5. typical capacitance vs. drain-to-source voltage fig 7. typical source-drain diode forward voltage 1 10 100 v ds , drain-to-source voltage (v) 0 400 800 1200 1600 2000 2400 c , c a p a c i t a n c e ( p f ) coss crss ciss v gs = 0v, f = 1 mhz c iss = c gs + c gd , c ds shorted c rss = c gd c oss = c ds + c gd 0 1020304050 q g total gate charge (nc) 0 4 8 12 16 20 v g s , g a t e - t o - s o u r c e v o l t a g e ( v ) v ds = 44v vds= 28v vds= 11v i d = 36a for test circuit see figure 13 0.2 0.6 1.0 1.4 1.8 2.2 v sd , source-todrain voltage (v) 0.1 1.0 10.0 100.0 1000.0 i s d , r e v e r s e d r a i n c u r r e n t ( a ) t j = 25c t j = 175c v gs = 0v 1 10 100 1000 v ds , drain-tosource voltage (v) 0.1 1 10 100 1000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) tc = 25c tj = 175c single pulse 1msec 10msec operation in this area limited by r ds (on) 100sec

6 www.kersemi.com fig 11. maximum effective transient thermal impedance, junction-to-case fig 9. maximum drain current vs. case temperature fig 10. normalized on-resistance vs. temperature 25 50 75 100 125 150 175 t c , case temperature (c) 0 10 20 30 40 50 60 70 i d , d r a i n c u r r e n t ( a ) limited by package -60 -40 -20 0 20 40 60 80 100 120 140 160 180 t j , junction temperature (c) 0.5 1.0 1.5 2.0 r d s ( o n ) , d r a i n - t o - s o u r c e o n r e s i s t a n c e ( n o r m a l i z e d ) i d = 36a v gs = 10v 1e-006 1e-005 0.0001 0.001 0.01 0.1 t 1 , rectangular pulse duration (sec) 0.001 0.01 0.1 1 10 t h e r m a l r e s p o n s e ( z t h j c ) 0.20 0.10 d = 0.50 0.02 0.01 0.05 single pulse ( thermal response ) notes: 1. duty factor d = t1/t2 2. peak tj = p dm x zthjc + tc ri (c/w) i (sec) 0.3962 0.00012 0.5693 0.00045 0.4129 0.0015 j j 1 1 2 2 3 3 r 1 r 1 r 2 r 2 r 3 r 3 c ci i / ri ci= i / ri

www.kersemi.com 7 q g q gs q gd v g charge d.u.t. v ds i d i g 3ma v gs .3 f 50k ? .2 f 12v current regulator same type as d.u.t. current sampling resistors + - !"$ fig 13b. gate charge test circuit fig 13a. basic gate charge waveform fig 12c. maximum avalanche energy vs. drain current fig 12b. unclamped inductive waveforms fig 12a. unclamped inductive test circuit t p v (br)dss i as fig 14. threshold voltage vs. temperature r g i as 0.01 ? t p d.u.t l v ds + - v dd driver a 15v 20v v gs 25 50 75 100 125 150 175 starting t j , junction temperature (c) 0 40 80 120 160 200 240 e a s , s i n g l e p u l s e a v a l a n c h e e n e r g y ( m j ) i d top 36a 8.6a bottom 4.8a -75 -50 -25 0 25 50 75 100 125 150 175 t j , temperature ( c ) 2.0 2.5 3.0 3.5 4.0 4.5 v g s ( t h ) g a t e t h r e s h o l d v o l t a g e ( v ) i d = 250a

8 www.kersemi.com fig 15. typical avalanche current vs.pulsewidth fig 16. maximum avalanche energy vs. temperature notes on repetitive avalanche curves , figures 15, 16: (for further info, see an-1005 at www.irf.com) 1. avalanche failures assumption: purely a thermal phenomenon and failure occurs at a temperature far in excess of t jmax . this is validated for every part type. 2. safe operation in avalanche is allowed as long ast jmax is not exceeded. 3. equation below based on circuit and waveforms shown in figures 12a, 12b. 4. p d (ave) = average power dissipation per single avalanche pulse. 5. bv = rated breakdown voltage (1.3 factor accounts for voltage increase during avalanche). 6. i av = allowable avalanche current. 7. t = allowable rise in junction temperature, not to exceed t jmax (assumed as 25c in figure 15, 16). t av = average time in avalanche. d = duty cycle in avalanche = t av f z thjc (d, t av ) = transient thermal resistance, see figure 11) p d (ave) = 1/2 ( 1.3bvi av ) = t/ z thjc i av = 2 t/ [1.3bvz th ] e as (ar) = p d (ave) t av 1.0e-06 1.0e-05 1.0e-04 1.0e-03 1.0e-02 1.0e-01 tav (sec) 0.1 1 10 100 1000 a v a l a n c h e c u r r e n t ( a ) 0.05 duty cycle = single pulse 0.10 allowed avalanche current vs avalanche pulsewidth, tav assuming tj = 25c due to avalanche losses. note: in no case should tj be allowed to exceed tjmax 0.01 25 50 75 100 125 150 175 starting t j , junction temperature (c) 0 10 20 30 40 50 60 e a r , a v a l a n c h e e n e r g y ( m j ) top single pulse bottom 1% duty cycle i d = 36a

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for n-channel hexfet power mosfets
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tr 16.3 ( .641 ) 15.7 ( .619 ) 8.1 ( .318 ) 7.9 ( .312 ) 12.1 ( .476 ) 11.9 ( .469 ) feed direction feed direction 16.3 ( .641 ) 15.7 ( .619 ) trr trl notes : 1. controlling dimension : millimeter. 2. all dimensions are shown in millimeters ( inches ). 3. outline conforms to eia-481 & eia-541. notes : 1. outline conforms to eia-481. 16 mm 13 inch repetitive rating; pulse width limited by max. junction temperature. (see fig. 11). limited by t jmax , starting t j = 25c, l = 0.08mh r g = 25 ? , i as = 36a, v gs =10v. part not recommended for use above this value. pulse width 1.0ms; duty cycle 2%. c oss eff. is a fixed capacitance that gives the same charging time as c oss while v ds is rising from 0 to 80% v dss .
limited by t jmax , see fig.12a, 12b, 15, 16 for typical repetitive avalanche performance. this value determined from sample failure population. 100% tested to this value in production. when mounted on 1" square pcb (fr-4 or g-10 material) . application note #an-994 ) !"#$ calculated continuous current based on maximum allowable junction temperature. package limitation current is 42a

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